Part Number :
IPG20N04S412ATMA1
Manufacturer :
IR (Infineon Technologies)
Description :
IPG20N04S412ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle :
New from this manufacturer
Delivery :
DHL、UPS、FedEx、Registered Mail
Payment :
T/T Paypal Visa MoneyGram Western Union
More Information :
IPG20N04S412ATMA1 More Information
ECAD :
Request Free CAD Models
Pricing(USD) :
$1.06
Remark :
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Width :
6.15 mm
Length :
5.15 mm
Packaging :
Tape & Reel
Rds On Max :
12.2 mΩ
Number of Pins :
8
Input Capacitance :
1.13 nF
Turn-On Delay Time :
9 ns
Turn-Off Delay Time :
10 ns
Max Power Dissipation :
41 W
Max Operating Temperature :
175 °C
Drain to Source Resistance :
12.2 mΩ
Continuous Drain Current (ID) :
20 A
Drain to Source Breakdown Voltage :
40 V
Products Category :
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty :
3623 In Stock
Applications :
Test & measurement
Hybrid, electric & powertrain systems
Broadband fixed line access
Height :
1 mm
Fall Time :
8 ns
Rise Time :
2 ns
Schedule B :
8541290080
Package Quantity :
5000
Power Dissipation :
41 W
On-State Resistance :
12.2 mΩ
Element Configuration :
Dual
Max Dual Supply Voltage :
40 V
Min Operating Temperature :
-55 °C
Gate to Source Voltage (Vgs) :
20 V
Drain to Source Voltage (Vdss) :
40 V
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